S. T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisawas, I. G. batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, and R. D. Schrimpf,”Performance, reliability, radiation effects, and aging issues in microelectronics: from atomic-scale physics to engineering-level modeling”, Solid State Electron. 54, 841-848 (2010).

Publication Topics density functional theory,aluminium compounds,passivation,radiation hardening (electronics),III-V semiconductors,annealing,semiconductor device noise,wide band gap semiconductors,MOSFET,boron compounds,dielectric materials,field effect transistors,hafnium compounds,molybdenum compounds,noise measurement,proton effects,semiconductor device …

1Materials Science and Technology Division, Oak Ridge National Laboratory, 17 Jan 2020 Sokrates Pantelides, Vanderbilt University. Plastic, glass and gels, also known as bulk amorphous materials, are everyday objects. But for Sokrates T. Pantelides. moreView Affiliations. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598.

Sokrates pantelides

IEEE Fellow Fellow of the American Physical Society Fellow of the Materials Research Society Fellow of the American Association for the Advancement of Science L. Tsetseris and S. T. Pantelides, “Graphene nano-ribbon formation through hydrogen-induced unzipping of carbon nanotubes”, Appl. Phys. Lett. 99, 143119 (2011).

View Sokrates Pantelides's business profile as Professor at Vanderbilt University. Find contact's direct phone number, email address, work history, and more.

Deep Centers in Semiconductors: Pantelides, Sokrates: Amazon.se: Books. Hos Adlibris hittar du miljontals böcker och produkter inom sokrates t.

View Sokrates Pantelides's business profile as Professor at Vanderbilt University. Find contact's direct phone number, email address, work history, and more.

99, 143119 (2011). B. Wang and S. T. Pantelides, “Controllable healing of defects and nitrogen doping of graphene by CO and NO molecules”, Phys. Rev. B 83, 245403 (2011). Sokrates Pantelides University Distinguished Professor of Physics and Engineering at Vanderbilt University Greater Nashville Area, TN 2 connections Sokrates T Pantelides. Vanderbilt University.

Sokrates T Pantelides. Vanderbilt University. Verified email at vanderbilt.edu JI Ziegler, RF Haglund Jr, ST Pantelides, KI Bolotin. Nano letters 13 (8), 3626 Publication Topics density functional theory,aluminium compounds,passivation,radiation hardening (electronics),III-V semiconductors,annealing,semiconductor device noise,wide band gap semiconductors,MOSFET,boron compounds,dielectric materials,field effect transistors,hafnium compounds,molybdenum compounds,noise measurement,proton effects,semiconductor device measurement,1/f noise,Monte Carlo Sokrates T. Pantelides The surfaces of rutile transition-metal oxides (TMO2) are widely investigated for catalysis, photoelectrochemical solar cells, memristors, and supercapacitors, but their Jin X, Zhang YY, Pantelides ST, et al. (2020) Integration of graphene and two-dimensional ferroelectrics: properties and related functional devices. Nanoscale Horizons: Ma RS, Ma J, Yan J, et al. (2020) Wrinkle-induced highly conductive channels in graphene on SiO/Si substrates.
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Phys. Professor Sokrates T. Pantelides Given the 2019 Award for International Scientific Cooperation of the Chinese Academy of Sciences on January 16, 2020 in 30 Mar 2020 Zhou, W., Lee, J., Nanda, J., Pantelides, S.T., Pennycook, S.J., Idrobo, J.-C.: Oleg S. Ovchinnikov, Andrew O'Hara & Sokrates T. Pantelides. 20 Nov 2019 Saurabh Ghosh & Sokrates T. Pantelides.
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Jin X, Zhang YY, Pantelides ST, et al. (2020) Integration of graphene and two-dimensional ferroelectrics: properties and related functional devices. Nanoscale Horizons: Ma RS, Ma J, Yan J, et al. (2020) Wrinkle-induced highly conductive channels in graphene on SiO/Si substrates. Nanoscale

E-bok, 2013. Laddas ned direkt. Köp Physics of SiO2 and Its Interfaces av Sokrates T Pantelides på Bokus.com. View Sokrates Pantelides's business profile as Professor at Vanderbilt University.

Organizing committee: Christos Panagopoulos (Nanyang Technological University of Singapore), chair Sokrates Pantelides (Vanderbilt University, Nashville, TN, USA) Jacobo Santamaria (Universidad Complutense de Madrid, Spain) Akihito Sawa (AIST Tsukuba, Japan) Marco Salluzzo (CNR/SPIN, Naples, Italy) Manuel Bibes (Unité Mixte de Physique CNRS/Thales, France) Contact : workshopcomplexoxides

It has recently been possible to deposit high-quality superconducting films without post-annealing. The deposition temperature is now lowered to approximately 400°C Such temperatures are compatible … DEGREES AWARDED:Ph.D., Physics, University of Illinois, 1973 (Thesis advisor: Professor C.T. Sah.Thesis title: Theory of Point-Imperfection States in Semicon Sokrates Pantelides is on Facebook. Join Facebook to connect with Sokrates Pantelides and others you may know. Facebook gives people the power to share PHYSICS BY SOKRATES T. PANTELIDES IBM Research Division Thomas J. Watson Research Center Yorktown Heights, N.Y. " As devices shrink below the micron regime, a very different and interesting world is unveiled. In a recent paper, the resistance of submicron junctions is shown to behave nonlinearly with current injection. H.J. Queisser, R. Trzcinski, “Nonlinear unipolar charge transport in View phone numbers, addresses, public records, background check reports and possible arrest records for Sokrates Pantelides. Whitepages people search is the most trusted directory.

Nanoscale “In the future, these fundamental discoveries are likely to serve as groundwork for new devices our current generation can’t even begin to imagine.” Prof. Sokrates Pantelides, of the Physics and Astronomy dept. (Vanderbilt University / Steve Green) Pantelides and his group employ atomic-scale and multiscale theoretical calculations (primarily density functional calculations) to investigate structural, electronic, optical, magnetic, and thermal properties of nanoparticles, nanostructures, two-dimensional materials, layered materials, complex oxides, semiconductor devices, ferroelectrics, and catalysis.